IKP03N120H2

IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

product image

IKP03N120H2 Picture
SeekIC No. : 00142881 Detail

IKP03N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

floor Price/Ceiling Price

US $ .92~1.84 / Piece | Get Latest Price
Part Number:
IKP03N120H2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.84
  • $1.58
  • $1.18
  • $.92
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/8

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-220AB-3


Features:

• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A



Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
IC 9.6
3.9
A
Pulsed collector current, tp limited by Tjmax ICpu ls 9.9 A
Turn off safe operating area
VCE 1200V, Tj 150°C
- 9.9 A
Diode forward current
TC = 25°C
TC = 100°C
IF 9.6
3.9
 
Gate-emitter voltage VGE ±20 V
Power dissipation
TC = 25°C
Pt o t 62.5 W
Operating junction and storage temperature Tj , Tstg -40...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
225 (for SMD)
°C



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Test Equipment
Semiconductor Modules
Boxes, Enclosures, Racks
Cables, Wires - Management
RF and RFID
Sensors, Transducers
View more