IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
IKP03N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220AB-3 | Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 1200 | V |
Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz |
IC | 9.6 3.9 |
A |
Pulsed collector current, tp limited by Tjmax | ICpu ls | 9.9 | A |
Turn off safe operating area VCE 1200V, Tj 150°C |
- | 9.9 | A |
Diode forward current TC = 25°C TC = 100°C |
IF | 9.6 3.9 |
|
Gate-emitter voltage | VGE | ±20 | V |
Power dissipation TC = 25°C |
Pt o t | 62.5 | W |
Operating junction and storage temperature | Tj , Tstg | -40...+150 | °C |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 225 (for SMD) |
°C |