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IKP06N60T

IGBT Transistors LOW LOSS DuoPack 600V 6A

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SeekIC No. : 00142846 Detail

IKP06N60T: IGBT Transistors LOW LOSS DuoPack 600V 6A

IKP06N60T Data Sheet

floor Price/Ceiling Price

US $ .63~1.27 / Piece | Get Latest Price
Part Number:
IKP06N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.27
  • $1.09
  • $.82
  • $.63
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C		 IC 12
6		 A
Pulsed collector current, tp limited by Tjmax ICpu ls 18
Turn off safe operating area
VCE 1200V, Tj 150°C		 - 18
Diode forward current
TC = 25°C
TC = 100°C		 IF 12
6
Diode pulsed current, tp limited by Tjmax IFpuls 18
Gate-emitter voltage VGE ±20 V
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150°C		 tSC 5 µs
Power dissipation
TC=25°C
 Ptot 88 W
Operating Tj -40...+175 °C
storage temperature Tstg -40...+175



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