IKP01N120H2 Selling Leads, Price trend , Infineon Technologies, IKP01N120H2 DataSheet download, circuit diagram from SeekIC.com

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IKP01N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

IKP01N120H2 Data Sheet

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Part Number:: IKP01N120H2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/21

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Recent History
What is this?

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-220-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-220-3

Features:

• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC2 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1200	V
Triangular collector currentT_C = 25, f = 140kHz T_C= 100, f = 140kHz	I_C	3.2 1.3	A
Pulsed collector current, tp limited by T_jmax	I_Cpuls	3.5
Turn off safe operating area V_CE 1200V, T_j 150	-	3.5
Diode forward current T_C = 25 T_C = 100	I_F	3.2 1.3
Gate-emitter voltage	V_GE	±20	V
Power dissipation T_C= 25	P_tot	28	W
Operating junction and storage temperature	T_J,T_stg	-40...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260

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IKP01N120H2

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