IKP01N120H2

IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

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SeekIC No. : 00143849 Detail

IKP01N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

floor Price/Ceiling Price

Part Number:
IKP01N120H2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-220-3


Features:

• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC2 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/



Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector current
TC = 25, f = 140kHz
TC = 100, f = 140kHz
IC 3.2
1.3
A
Pulsed collector current, tp limited by Tjmax ICpuls 3.5
Turn off safe operating area
VCE 1200V, Tj 150
- 3.5
Diode forward current
TC = 25
TC = 100
IF 3.2
1.3
Gate-emitter voltage VGE ±20 V
Power dissipation
TC = 25
Ptot 28 W
Operating junction and storage temperature TJ,Tstg -40...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260



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