IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
IKP01N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220-3 | Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 1200 | V |
Triangular collector current TC = 25, f = 140kHz TC = 100, f = 140kHz |
IC | 3.2 1.3 |
A |
Pulsed collector current, tp limited by Tjmax | ICpuls | 3.5 | |
Turn off safe operating area VCE 1200V, Tj 150 |
- | 3.5 | |
Diode forward current TC = 25 TC = 100 |
IF | 3.2 1.3 | |
Gate-emitter voltage | VGE | ±20 | V |
Power dissipation TC = 25 |
Ptot | 28 | W |
Operating junction and storage temperature | TJ,Tstg | -40...+150 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |