Position: Home  > All Categories> Integrated Circuits (ICs) > IKP04N60T

IKP04N60T

IGBT Transistors LOW LOSS DuoPack 600V 4A

product image

IKP04N60T Picture
See larger image
SeekIC No. : 00142893 Detail

IKP04N60T: IGBT Transistors LOW LOSS DuoPack 600V 4A

IKP04N60T Data Sheet

floor Price/Ceiling Price

US $ .57~1.14 / Piece | Get Latest Price
Part Number:
IKP04N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.14
  • $.98
  • $.73
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3


Features:

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175
• Short circuit withstand time 5s
• Designed for :
- Frequency Converters
- Drives
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax
TC = 25
TC = 100		 IC 8
4		 A
Pulsed collector current, tp limited by Tjmax ICpuls 12  
Turn off safe operating area VCE 600V, Tj 175 - 12  
Diode forward current
TC = 25
TC = 100		 IF 4
8		  
Diode pulsed current, tp limited by Tjmax IFpuls 12  
Gate-emitter voltage VGE ±20 V
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150		 tSC 5  
Power dissipation, TC = 25 Ptot 42 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260  
1) Allowed number of short circuits: <1000; time between short circuits: >1s.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Transformers
TM-09210
BV222-1-00992
Prototyping Products
AVT4168
DE1
LED Products
LM24P20
KCG057QV1DB-G770
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Optical Inspection Equipment
AA924
A21K4B
View more