IKW30N60T

IGBT Transistors LOW LOSS DuoPack 600V 30A

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SeekIC No. : 00142872 Detail

IKW30N60T: IGBT Transistors LOW LOSS DuoPack 600V 30A

floor Price/Ceiling Price

US $ 2.03~3.08 / Piece | Get Latest Price
Part Number:
IKW30N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.08
  • $2.75
  • $2.25
  • $2.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Pinout

  Connection Diagram


Specifications

storage temperature
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC 60
30
A
Pulsed collector current, tp limited by Tjmax ICpuls 90
Turn off safe operating area
VCE 1200V, Tj 150°C
- 90
Diode forward current
TC = 25°C
TC = 100°C
IF 60
30
Diode pulsed current, tp limited by Tjmax IFpuls 90
Gate-emitter voltage VGE ±20 V
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150°C
tSC 5 s
Power dissipation
TC=25°C
Ptot 60
30
W
Operating Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260



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