IGBT Transistors LOW LOSS DuoPack 600V 30A
IKW30N60T: IGBT Transistors LOW LOSS DuoPack 600V 30A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 600 | V |
DC collector current, limited by Tjmax TC = 25°C TC = 100°C |
IC | 60 30 |
A |
Pulsed collector current, tp limited by Tjmax | ICpuls | 90 | |
Turn off safe operating area VCE 1200V, Tj 150°C |
- | 90 | |
Diode forward current TC = 25°C TC = 100°C |
IF | 60 30 | |
Diode pulsed current, tp limited by Tjmax | IFpuls | 90 | |
Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time1) VGE = 15V, VCC 400V, Tj 150°C |
tSC | 5 | s |
Power dissipation TC=25°C |
Ptot | 60 30 |
W |
Operating | Tj | -40...+175 | °C |
Storage temperature | Tstg | -55...+175 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |