IKW08T120

Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 16 A
Power Dissipation : 70 W


Features:

 •  Approx. 1.0V reduced V_CE(sat)   and 0.5V reduced VF compared to BUP305D
•  Short circuit withstand time - 10µs
•  Designed for :
  - Frequency Converters
  - Uninterrupted Power Supply
•  Trench and Fieldstop technology for 1200 V applications offers :
  - very tight parameter distribution
  - high ruggedness, temperature stable behavior
•  NPT technology offers easy parallel switching capability due to   positive temperature coefficient in V_CE(sat)
•  Low EMI
•  Low Gate Charge 
•  Very soft, fast recovery anti-parallel EmCon HE diode 
•  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt
 



Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1200	V
DC collector current TC = 25 TC = 100	IC	16 8	A
Pulsed collector current, tp limited by Tjmax	ICpuls	24
urn off safe operating area VCE 1200V, Tj 150	-	-
Diode forward current TC = 25 TC = 100	IF	16 8
Diode pulsed current, tp limited by Tjmax	IFpuls	24
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1)	tSC	10	µs
Power dissipation TC = 25	Pt o t	70	W
Operating junction temperature	Tj	-40...+150
Storage temperature	Ts tg	-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	250