IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
IKW03N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |