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IKW20N60T

IGBT Transistors LOW LOSS DuoPack 600V 20A

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SeekIC No. : 00142863 Detail

IKW20N60T: IGBT Transistors LOW LOSS DuoPack 600V 20A

IKW20N60T Data Sheet

floor Price/Ceiling Price

US $ 1.79~2.71 / Piece | Get Latest Price
Part Number:
IKW20N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.71
  • $2.42
  • $1.98
  • $1.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time 5s
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
40
20
A
Pulsed collector current, tp limited by Tjmax
ICpuls
60
A
Turn off safe operating area (VCE 600V, Tj 175°C)
-
60
A
Diode forward current, limited by Tjmax  TC = 25°C
TC = 100°C
IF
40
20
A
Diode pulsed current, tp limited by Tjmax
IFpuls
60
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150°C
tSC
5
s
Power dissipation TC = 25°C
Ptot
166
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.


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