IKW75N60T

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 80 A
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : TO-247-3
Power Dissipation : 428 W


Features:

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5s
• Positive temperature coefficient in VCE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switching speed
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Application

• Frequency Converters
• Uninterrupted Power Supply


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current, limited by Tjmax TC = 25°C TC = 100°C	IC	802) 75	A
Pulsed collector current, tp limited by Tjmax	ICpul s	225
Turn off safe operating area (VCE 600V, Tj 175°C)	-	225
Diode forward current, limited by Tjmax TC = 25°C TC = 100°C	IF	802) 75
Diode pulsed current, tp limited by Tjmax	IFpul s	225
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150°C	tSC	5	s
Power dissipation TC = 25°C	Pt o t	428	W
Operating junction temperature	Tj	-40...+175
Storage temperature	Ts tg	-55...+175
Solder temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s		260

1) J-STD-020 and JESD-022
2) Value limited by bondwire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.