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The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-statevoltage drop varies only moderately between 25oCand150oC.
The IGBT is ideal for many high voltage switchingapplications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motorcontrols, power supplies and drivers for solenoids, relaysand contactors.Formerly developmental type TA49113.
HGTD3N60C3S Maximum Ratings
ALL TYPES HGTD3N60C3S
UNITS
Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous
At TC = 25oC
IC25
6
A
At TC = 110oC .
IC110
3
A
Collector Current Pulsed (Note 1)
ICM
24
A
Gate to Emitter Voltage Continuous
VGES
± 20
V
Gate to Emitter Voltage Pulsed
VGEM
± 30
V
Switching Safe Operating Area at TJ = 150oC, Figure 14
SSOA
18A at 480V
Power Dissipation Total at TC = 25oC .
EAS
33
W
Power Dissipation Total at TC = 25oC .
PD
0.27
W/oC
Reverse Voltage Avalanche Energy.
100
mJ
Operating and Storage Junction Temperature Range
TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6
tSC
8
µs
HGTD3N60C3S Features
• 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss
HGTD3N60C3S9A Parameters
Technical/Catalog Information
HGTD3N60C3S9A
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
6A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 3A
Power - Max
33W
Mounting Type
Surface Mount
Package / Case
DPak, SC-63, TO-252 (2 leads+tab)
Packaging
Tape & Reel (TR)
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HGTD3N60C3S9A HGTD3N60C3S9A
HGTD6N40E1 General Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.