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HGT1N40N60A4, HGT1N40N60A4D, HGT1S10N120BNS

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Info of HGT1N40N60A4
Info of HGT1N40N60A4D
Info of HGT1S10N120BNS

HGT1N40N60A4, HGT1N40N60A4D, HGT1S10N120BNS Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:FSC/INF D/C:06+

HGT1N40N60A4, HGT1N40N60A4D, HGT1S10N120BNS Picture

HGT1N40N60A4, HGT1N40N60A4D, HGT1S10N120BNS Datasheet download

Five Points

Part Number: HGT1N40N60A4

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: FSC/INF

D/C: 06+

Description: IGBT NPT N-CHAN 1200V TO-263AB

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HGT1N40N60A4D General Description

The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49349.

HGT1N40N60A4D Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 600 V
Collector Current Continuous At T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 110 A
Collector Current Continuous At T_C= 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 45 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 2) . . . . . . . . . . . . . .SSOA 200A at 600V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 298 W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 W/
RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min) . . . . . . . . . . . . . . . . ..V_ISOL 2500 V
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 N-m
Terminal Screw Torque 4mm Metric Screw Size. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 N-m

HGT1N40N60A4D Features

• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T_J= 125
• Low Conduction Loss

HGT1N40N60A4D Connection Diagram

HGT1S10N120BNS Parameters

Technical/Catalog Information	HGT1S10N120BNS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	35A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGT1S10N120BNS HGT1S10N120BNS

HGT1S10N120BNS General Description

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49290.

HGT1S10N120BNS Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 35 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 17 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 2) . . . . . . . . . . . . . . . .. SSOA 55A at 1200V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 298 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AV 80 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 300
Short Circuit Withstand Time (Note 3) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . ..t_SC 8 µs
Short Circuit Withstand Time (Note 3) at V_GE= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . ..t_SC 15 µs

HGT1S10N120BNS Features

• 35A, 1200V, T_C= 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards

HGT1S10N120BNS Connection Diagram

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