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HGT1S12N60A4S

Features: • >100kHz Operation at 390V, 12A• 200kHz Operation at 390V, 9A• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125• Low Conduction Loss• Temperature Compensating SABER Model http://www.intersil.comR...

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SeekIC No. : 004362088 Detail

HGT1S12N60A4S: Features: • >100kHz Operation at 390V, 12A• 200kHz Operation at 390V, 9A• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 12...

HGT1S12N60A4S Data Sheet

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Part Number:
HGT1S12N60A4S
Supply Ability:
5000

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  • Qty
  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125
• Low Conduction Loss
• Temperature Compensating SABER Model
  http://www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
  Components to PC Boards


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC25 54 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . .  IC110 23 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 167 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.33 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG 260  


Description

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S  devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49335.




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