HGT1N30N60A4D

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 250 nA
Collector-Emitter Saturation Voltage : 2.7 V
Continuous Collector Current at 25 C : 96 A
Package / Case : SOT-227-4
Power Dissipation : 225 W


Features:

• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 58ns at T_J= 125
• Low Conduction Loss


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 600 V
Collector Current Continuous At T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 96 A
Collector Current Continuous At T_C= 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 39 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 240 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 2) . . . . . . . . . . . . . .SSOA 150A at 600V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  P_D 255 W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 W/
RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min) . . . . . . . . . . . . . . . . ..V_ISOL 2500 V
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 N-m
Terminal Screw Torque 4mm Metric Screw Size. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 N-m



Description

The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conductio loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

This HGT1N30N60A4D IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.