IGBT Transistors 12A 600V N-Ch
HGT1S12N60A4DS: IGBT Transistors 12A 600V N-Ch
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.7 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 54 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 167 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-263AB-3 | Packaging : | Tube |
Technical/Catalog Information | HGT1S12N60A4DS |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 54A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
Power - Max | 167W |
Mounting Type | Surface Mount |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
Packaging | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGT1S12N60A4DS HGT1S12N60A4DS |