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HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLT

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Info of HGT1S14N36G3VL
Info of HGT1S14N36G3VLS
Info of HGT1S14N36G3VLT

HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLT Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:TO

HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLT Picture

HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLT Datasheet download

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Part Number: HGT1S14N36G3VL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263

D/C: TO

Description: IGBT ESD N-CHAN 380V TO-220AB

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HGT1S14N36G3VL General Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

HGT1S14N36G3VL Maximum Ratings

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CER 390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B_VECS 24 V
Collector Current Continuous at V_GE = 5V, T_C = +25. . . . . . . . . . . . . . . . . . . . I_C2518 A
Collector Current Continuous at V_GE = 5V, T_C = +100. . . . . . . . . . . . . . . . . . .I_C100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM±10 V
Inductive Switching Current at L = 2.3mH, T_C = +25 . . . . . . . . . . . . . . . . . . . I_SCIS 17 A
Inductive Switching Current at L = 2.3mH, T_C = + 175 . . . . . . . . . . . . . . . . . .I_SCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, T_C = +25. . . . . . . . . . . E_AS 332 mJ
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 100 W
Power Dissipation Derating T_C > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . T_J, T_STG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV

HGT1S14N36G3VL Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Ignition Energy Capable

HGT1S14N36G3VL Connection Diagram

HGT1S14N36G3VLS General Description

HGT1S14N36G3VLS Maximum Ratings

HGT1S14N36G3VLS Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Ignition Energy Capable

HGT1S14N36G3VLS Connection Diagram

HGT1S14N36G3VLT Parameters

Technical/Catalog Information	HGT1S14N36G3VLT
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Logic
Voltage - Collector Emitter Breakdown (Max)	390V
Current - Collector (Ic) (Max)	18A
Vce(on) (Max) @ Vge, Ic	2.2V @ 5V, 14A
Power - Max	100W
Mounting Type	Through Hole
Package / Case	TO-262AA
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGT1S14N36G3VLT HGT1S14N36G3VLT

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