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HGT1S14N37G3VLS, HGT1S14N40F3VLS, HGT1S15N120C3

Table of contents:
Info of HGT1S14N37G3VLS
Info of HGT1S14N40F3VLS
Info of HGT1S15N120C3

HGT1S14N37G3VLS, HGT1S14N40F3VLS, HGT1S15N120C3 Selling Leads, Datasheet

MFG:Fairchild Package Cooled:N/A D/C:TO

HGT1S14N37G3VLS, HGT1S14N40F3VLS, HGT1S15N120C3 Picture

HGT1S14N37G3VLS, HGT1S14N40F3VLS, HGT1S15N120C3 Datasheet download

Five Points

Part Number: HGT1S14N37G3VLS

MFG: Fairchild

Package Cooled: N/A

D/C: TO

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HGT1S14N37G3VLS General Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

Formerly Developmental Type TA49169.

HGT1S14N37G3VLS Maximum Ratings

Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . .BV_CER 380 V
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . .BV_ECS 24 V
Collector Current Continuous at V_GE = 5V, T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . .I_C2525 A
Collector Current Continuous at V_GE = 5V, T_C = 110 . . . . . . . . . . . . . . . . . . . . . .I_C110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±10 V
Inductive Switching Current at L = 3mH, T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . I_SCIS 15 A
Inductive Switching Current at L = 3mH, T_C = 150. . . . . . . . . . . . . . . . . . . . . . I_SCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, T_C = 25 . . . . . . . . . . . . . . . E_AS 340 mJ
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 136 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_STG-55 to 175
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J -55 to 175
Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . E_SD 5 kV
Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . E_SD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. T_PKG 260

HGT1S14N37G3VLS Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Internal Series and Shunt Gate Resistors
• Low Conduction Loss
• Ignition Energy Capable

HGT1S14N37G3VLS Connection Diagram

HGT1S14N40F3VLS General Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment.

Formerly Developmental Type 49023

HGT1S14N40F3VLS Maximum Ratings

Symbol	Parameter	Ratings	Units
BV_CES	Collector to Emitter Breakdown Voltage (I_C = 1 mA)	420	V
BV_CGR	Collector to Gate Breakdown Voltage (R_GE = 10KΩ)	420	V
E_SCIS25	Drain to Source Avalanche Energy at L = 2.3mHy, T_C = 25°C	330	mJ
I_C25	Collector Current Continuous, at T_C = 25°C, V_GE = 4.5V	38	A
I_C90	Collector Current Continuous, at T_C= 90°C, V_GE = 4.5V	35	A
V_GES	Gate to Emitter Voltage Continuous	±10	V
V_GEM	Gate to Emitter Voltage Pulsed	±12	V
I_CO	L = 2.3mHy, T_C = 25°C	17	A
I_CO	L = 2.3mHy, T_C = 150°C	12	A
P_D	Power Dissipation Total T_C= 25°C	262	W
	Power Dissipation Derating T_C > 25°C	1.75	W/°C
T_J, T_STG	Operating and Storage Junction Temperature Range	40 to 175	°C
T_L	Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)	300	°C
T_pkg	Max Lead Temp for Soldering (Package Body for 10s)	260	°C
ESD	Electrostatic Discharge Voltage at 100pF, 1500Ω	3	KV

HGT1S14N40F3VLS Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• Max T_J = 175
• SCIS Energy = 330mJ at T_J = 25

HGT1S14N40F3VLS Typical Application

• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications

HGT1S14N40F3VLS Connection Diagram

HGT1S15N120C3 General Description

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGT1S15N120C3 Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 35 A
At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 15 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 120 A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150oC, Figure 14 . . . . . . . .. SSOA 15A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D164 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . T_J, T_STG-55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . t_SC6 s
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . t_SC 25 s

HGT1S15N120C3 Features

• 35A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 350ns at T_J = 150
• Short Circuit Rating

HGT1S15N120C3 Connection Diagram

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