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HGT1S12N60A4S9A, HGT1S12N60B3DS, HGT1S12N60B3S

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Info of HGT1S12N60A4S9A
Info of HGT1S12N60B3DS
Info of HGT1S12N60B3S

HGT1S12N60A4S9A, HGT1S12N60B3DS, HGT1S12N60B3S Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

HGT1S12N60A4S9A, HGT1S12N60B3DS, HGT1S12N60B3S Picture

HGT1S12N60A4S9A, HGT1S12N60B3DS, HGT1S12N60B3S Datasheet download

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Part Number: HGT1S12N60A4S9A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: N/A

D/C: 09+

Description: IGBT SMPS N-CHAN 600V TO-263AB

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HGT1S12N60A4S9A Parameters

Technical/Catalog Information	HGT1S12N60A4S9A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	54A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Power - Max	167W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGT1S12N60A4S9A HGT1S12N60A4S9A HGT1S12N60A4S9ADKR ND HGT1S12N60A4S9ADKRND HGT1S12N60A4S9ADKR

HGT1S12N60A4S9A General Description

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49335.

HGT1S12N60A4S9A Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 54 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C₁₁₀ 23 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150, Figure 2 . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 167 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_PKG 260

HGT1S12N60A4S9A Features

• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T_J = 125
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards

HGT1S12N60A4S9A Connection Diagram

HGT1S12N60B3DS General Description

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49173.

HGT1S12N60B3DS Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 27 A
At T_C = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C11012 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM110 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . . . SSOA 96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 104 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg260
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 5 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 10 µs

HGT1S12N60B3DS Features

• 27A, 600V, T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards

HGT1S12N60B3DS Connection Diagram

HGT1S12N60B3S General Description

The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49171.

HGT1S12N60B3S Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES600 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 27 A
At T_C= 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 110 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . SSOA 96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 104 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 5 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . .t_SC 10 µs

HGT1S12N60B3S Features

• 27A, 600V, TC = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGT1S12N60B3S Connection Diagram

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