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HGT1S12N60C3

Features: • 24A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150• Short Circuit Rating• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ....

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SeekIC No. : 004362091 Detail

HGT1S12N60C3: Features: • 24A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150• Short Circuit Rating• Low Conduction L...

HGT1S12N60C3 Data Sheet

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Part Number:
HGT1S12N60C3
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 24A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  BVCES 600 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .IC25 24 A
Collector Current Continuous At TC = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .ICM 96 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150, Figure 14 . . . . . . . . . . .. .SSOA 24A at 600V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . tSC 4 s
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . tSC 13 s


Description

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S  devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.




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