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HGT1S12N60B3DS

Features: • 27A, 600V, TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150• Short Circuit Rating• Low Conduction Loss• Hyperfast Anti-Parallel Diode• Related Literature- TB334 Guidelines for Soldering...

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SeekIC No. : 004362089 Detail

HGT1S12N60B3DS: Features: • 27A, 600V, TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150• Short Circuit Rating• Low Conduction ...

HGT1S12N60B3DS Data Sheet

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Part Number:
HGT1S12N60B3DS
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/12/21

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Product Details

Description



Features:

• 27A, 600V, TC = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
  Components to PC Boards


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC25 27 A
At TC = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ICM 110 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . . . . . .  SSOA 96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  0.83 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 5 µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs


Description

This HGT1S12N60B3DS family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These HGT1S12N60B3DS devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188.

The HGT1S12N60B3DS IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly developmental type TA49173.




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