HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3S Selling Leads, Datasheet
MFG:KA/INF Package Cooled:TO D/C:TO
HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3S Datasheet download
Part Number: HGT1S20N60C3R
MFG: KA/INF
Package Cooled: TO
D/C: TO
HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3S
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Info of HGT1S20N60C3R
Info of HGT1S20N60C3RS
Info of HGT1S20N60C3S
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About HGT1S20N60C3R
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Datasheet: HGT1S20N60C3R
File Size: 110307 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About HGT1S20N60C3RS
PDF/DataSheet Download
Datasheet: HGT1S20N60C3RS
File Size: 110307 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About HGT1S20N60C3S
PDF/DataSheet Download
Datasheet: HGT1S20N60C3S
File Size: 83639 KB
Manufacturer: INTERSIL [Intersil Corporation]
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HGT1S20N60C3R General Description
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level.
The electrical specifications include typical Turn-On and Turn-Off dv/dt ratings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). The data was obtained with the diode at the same TJ as the IGBT under test.
Formerly Developmental Type TA49047.
HGT1S20N60C3R Maximum Ratings
ALL TYPES UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . IC25 40 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .. .ICM 80 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . .. . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . .. . .SSOA 80A at 600 V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . .TL 260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . tSC 10 ms
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RGE = 10W.
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . IC25 40 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .. .ICM 80 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . .. . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . .. . .SSOA 80A at 600 V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . .TL 260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . tSC 10 ms
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RGE = 10W.
HGT1S20N60C3R Features
• 40A, 600V TJ = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . .. 10s
• Low Conduction Loss
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . .. 10s
• Low Conduction Loss
HGT1S20N60C3RS General Description
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level.
The electrical specifications include typical Turn-On and Turn-Off dv/dt ratings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). The data was obtained with the diode at the same TJ as the IGBT under test.
Formerly Developmental Type TA49047.
HGT1S20N60C3RS Maximum Ratings
ALL TYPES UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . IC25 40 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .. .ICM 80 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . .. . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . .. . .SSOA 80A at 600 V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . .TL 260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . tSC 10 ms
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RGE = 10W.
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . IC25 40 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .. .ICM 80 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . .. . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . .. . .SSOA 80A at 600 V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . .TL 260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . tSC 10 ms
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RGE = 10W.
HGT1S20N60C3RS Features
• 40A, 600V TJ = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . .. 10s
• Low Conduction Loss
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . .. 10s
• Low Conduction Loss
HGT1S20N60C3S General Description
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49178.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49178.
HGT1S20N60C3S Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . IC25 45 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . ..SSOA 20A at 600V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..PD 164 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.32 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg260
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . IC25 45 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . ..SSOA 20A at 600V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..PD 164 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.32 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg260
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
HGT1S20N60C3S Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
HGT1S20N60C3S Connection Diagram
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