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HGT1S2N120BNDS

Features: • 12A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC• Short Circuit Rating• Low Conduction Loss• Thermal Impedance SPICE Model www.intersil.com• Related Literature- TB334 G...

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HGT1S2N120BNDS: Features: • 12A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC• Short Circuit Rating• Low Condu...

HGT1S2N120BNDS Data Sheet

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Part Number:
HGT1S2N120BNDS
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5000

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Product Details

Description



Features:

• 12A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Collector to Emitter Voltage ................ . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . ........................... IC110
Collector Current Pulsed (Note 1) . . . . . ........ICM
Gate to Emitter Voltage Continuous. . . . . . . .. VGES
Gate to Emitter Voltage Pulsed . . ............... VGEM
Switching Safe Operating Area at TJ = 150oC (Figur.SSOA
Power Dissipation Total at TC = 25oC . ......... . . PD
Power Dissipation Derating TC > . . . . . . .. . . 25oC
Operating and Storage Junction Temperature RangeTJ,TSTG
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V. tSC		 1200

12
5.6
20
±20
±30
12A at 1200V
104
0.83
-55 to 150


300
260
8
15		 V

A
A
A
V
V
W
W/o C
o C
o C


o C
µs
µs



Description

The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The HGTP2N120BND and HGT1S2N120BNDS  IGBT used is the development type TA49312. The Diode used is the development type TA49056. The HGTP2N120BND and HGT1S2N120BNDS  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.




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