HGT1S12N60C3DS

Features:

• 24A, 600V at T_C = 25
• Typical Fall Time at T_J = 150 . . . . . . . . . . . . . . . . 210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  BV_CES 600 V
Collector Current Continuous
At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 24 A
At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . I_C110 12 A
Average Diode Forward Current at 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_(AVG) 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. I_CM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 14) . . . . . . . . . . . SSOA 24A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 104 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . T_J, T_STG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . t_SC 4 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . t_SC 13 µs


Description

This HGT1S12N60C3DS family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The HGT1S12N60C3DS device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.

The HGT1S12N60C3DS IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.