H7N0308CF, H7N0310LD, H7N0310LD-E Selling Leads, Datasheet
MFG:RENESAS Package Cooled:TO D/C:02+
H7N0308CF, H7N0310LD, H7N0310LD-E Datasheet download
Part Number: H7N0308CF
MFG: RENESAS
Package Cooled: TO
D/C: 02+
H7N0308CF, H7N0310LD, H7N0310LD-E
- Table of contents:
Info of H7N0308CF
Info of H7N0310LD
Info of H7N0310LD-E
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About H7N0308CF
PDF/DataSheet Download
Datasheet: H7N0308CF
File Size: 91640 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About H7N0310LD
PDF/DataSheet Download
Datasheet: H7N0310LD
File Size: 134610 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
H7N0308CF Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 60 | A |
| Drain peak current | ID(pulse) Note 1 | 240 | A |
| Body-drain diode reverse drain current | IDR | 60 | A |
| Channel dissipation | Pch Note 3 | 30 | W |
| Channel to Case Thermal Impedance | ch-c | 4.17 | °C/W |
| Channel to Ambient Thermal Impedance |
ch-a | 62.5 | °C/W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
H7N0308CF Features
Low on-resistance
RDS(on) = 3.8 mΩ typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source
RDS(on) = 3.8 mΩ typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source
H7N0310LD Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 30 | A |
| Drain peak current | ID(pulse) Note 1 | 120 | A |
| Body-drain diode reverse drain current | IDR | 30 | A |
| Channel dissipation | Pch Note 3 | 50 | W |
| Channel to Case Thermal Impedance | ch-c | 2.5 | °C/W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
H7N0310LD Features
Low on-resistance
RDS(on) = 8 mΩ typ.
Low drive current
RDS(on) = 8 mΩ typ.
Low drive current
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