Features: • Low on-resistanceRDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 30 V Gate to Source voltage VGSS ±20 V Drain c...
H7N0308AB: Features: • Low on-resistanceRDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit ...
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Item |
Symbol |
Ratings |
Unit |
Drain to Source voltage |
VDSS |
30 |
V |
Gate to Source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
70 |
A |
Drain peak current |
ID (pulse) Note1 |
280 |
A |
Channel dissipation |
Pch Note 2 |
70 |
A |
Channel dissipation |
Pch Note2 |
100 |
W |
Channel to case thermal impedance |
ch-c |
1.25 |
°C/W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |