Features: Low on-resistance RDS(on)= 3.8 mΩtyp. Low drive current 4.5 V gate drive device can be driven from 5 V source Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A Dra...
H7N0308CF: Features: Low on-resistance RDS(on)= 3.8 mΩtyp. Low drive current 4.5 V gate drive device can be driven from 5 V source Specifications Item Symbol Ratings Unit Drain to source v...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 60 | A |
| Drain peak current | ID(pulse) Note 1 | 240 | A |
| Body-drain diode reverse drain current | IDR | 60 | A |
| Channel dissipation | Pch Note 3 | 30 | W |
| Channel to Case Thermal Impedance | ch-c | 4.17 | °C/W |
| Channel to Ambient Thermal Impedance |
ch-a | 62.5 | °C/W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |