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H7N0608LM, H7N0608LS, H7N1004AB

H7N0608LM, H7N0608LS, H7N1004AB Selling Leads, Datasheet

MFG:RENESAS  Package Cooled:TO  D/C:02+

H7N0608LM, H7N0608LS, H7N1004AB Picture

H7N0608LM, H7N0608LS, H7N1004AB Datasheet download

Five Points

Part Number: H7N0608LM

 

MFG: RENESAS

Package Cooled: TO

D/C: 02+

 

 

 
 
 
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About H7N0203AB

PDF/DataSheet Download

Datasheet: H7N0203AB

File Size: 126666 KB

Manufacturer: RENESAS [Renesas Technology Corp]

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About H7N0203AB

PDF/DataSheet Download

Datasheet: H7N0203AB

File Size: 126666 KB

Manufacturer: RENESAS [Renesas Technology Corp]

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About H7N0203AB

PDF/DataSheet Download

Datasheet: H7N0203AB

File Size: 126666 KB

Manufacturer: RENESAS [Renesas Technology Corp]

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H7N0608LM Maximum Ratings

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Drain to source voltage
VGSS
±20
V
Drain current
ID
70
A
Drain peak current
ID(pulse) Note1
280
A
Body-drain diode reverse drain current
IDR
70
A
Avalanche current
IAP Note 3
40
A
Avalanche energy
EAR Note 3
137
mJ
Channel dissipation
Pch Note 2
80
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150

Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tch = 25 , Rg 50
            3. Tc = 25

H7N0608LM Features

• Low on-resistance
   RDS(on) = 6.0 m typ.
• Low drive current
• Available for 4.5 V gate drive

H7N0608LS Maximum Ratings

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Drain to source voltage
VGSS
±20
V
Drain current
ID
70
A
Drain peak current
ID(pulse) Note1
280
A
Body-drain diode reverse drain current
IDR
70
A
Avalanche current
IAP Note 3
40
A
Avalanche energy
EAR Note 3
137
mJ
Channel dissipation
Pch Note 2
80
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150

Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tch = 25 , Rg 50
            3. Tc = 25

H7N0608LS Features

• Low on-resistance
   RDS(on) = 6.0 m typ.
• Low drive current
• Available for 4.5 V gate drive

H7N1004AB Maximum Ratings

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
Drain peak current
ID (pulse)
Note 1
100
A
Body to drain diode reverse drain current
IDR
30
A
Avalanche current
IAPNote 2
15
A
Avalanche energy
EARNote2
22.5
mJ
Channel dissipation
Pch Note 3
50
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25
3. Value at Tch = 25, Rg 50

H7N1004AB Features

• Low on-resistance RDS (on) =25 m typ.
• Low drive current
• Available for 4.5 V gate drive

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