H7N0602AB, H7N0602LM, H7N0602LS Selling Leads, Datasheet
MFG:RENESAS Package Cooled:TO D/C:02+
H7N0602AB, H7N0602LM, H7N0602LS Datasheet download
Part Number: H7N0602AB
MFG: RENESAS
Package Cooled: TO
D/C: 02+
H7N0602AB, H7N0602LM, H7N0602LS
- Table of contents:
Info of H7N0602AB
Info of H7N0602LM
Info of H7N0602LS
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About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
H7N0602AB Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
|
Drain to source voltage |
VDSS |
60 |
V |
|
Gate to source voltage |
VGSS |
±20 |
V |
|
Drain current |
ID |
85 |
A |
|
Drain peak current |
ID (pulse)Note1 |
340 |
A |
|
Body-drain diode reverse drain current |
IDR |
85 |
A |
|
Avalanche current |
IAP Note3 |
65 |
A |
|
Avalanche energy |
EAR Note3 |
362 |
mJ |
|
Channel dissipation |
PchNote2 |
100 |
W |
|
Channel temperature |
Tch |
150 |
|
|
Storage temperature |
Tstg |
55 to +150 |
2. Value at Tc = 25
3. Value at Tch = 25, Rg 50
H7N0602AB Features
• Low on-resistance RDS(on) = 4.1 m typ.
• Low drive current
• Available for 4.5 V gate drive
• Low drive current
• Available for 4.5 V gate drive
H7N0602LM Maximum Ratings
| Item | Symbol | Value | Unit |
| Drain to source voltage | VDSS | 60 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 85 | A |
| Drain peak current | ID(pulse)Note 1 | 340 | A |
| Body to drain diode reverse drain current | IDR | 85 | A |
| Avalanche current | IAPNote 3 | 65 | A |
| Avalanche energy | EARNote 3 | 362 | mJ |
| Channel dissipation | PchNote 2 | 100 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | -55 to +150 |
Notes: 1. PW 10s, duty cycle 1%
2. Value at Tc = 25
3. Value at Tch = 25?C, Rg 50
H7N0602LM Features
`Low on-resistance RDS (on) = 4.1 m typ.
` 4.5 V gate drive devices
` High Speed Switching
` 4.5 V gate drive devices
` High Speed Switching
H7N0602LS Maximum Ratings
| Item | Symbol | Value | Unit |
| Drain to source voltage | VDSS | 60 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 85 | A |
| Drain peak current | ID(pulse)Note 1 | 340 | A |
| Body to drain diode reverse drain current | IDR | 85 | A |
| Avalanche current | IAPNote 3 | 65 | A |
| Avalanche energy | EARNote 3 | 362 | mJ |
| Channel dissipation | PchNote 2 | 100 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | -55 to +150 |
Notes: 1. PW 10s, duty cycle 1%
2. Value at Tc = 25
3. Value at Tch = 25?C, Rg 50
H7N0602LS Features
`Low on-resistance RDS (on) = 4.1 m typ.
` 4.5 V gate drive devices
` High Speed Switching
` 4.5 V gate drive devices
` High Speed Switching
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