H7N0311LM, H7N0311LS, H7N0312AB Selling Leads, Datasheet
MFG:RENESAS Package Cooled:TO D/C:02+
H7N0311LM, H7N0311LS, H7N0312AB Datasheet download
Part Number: H7N0311LM
MFG: RENESAS
Package Cooled: TO
D/C: 02+
H7N0311LM, H7N0311LS, H7N0312AB
- Table of contents:
Info of H7N0311LM
Info of H7N0311LS
Info of H7N0312AB
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About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0312AB
PDF/DataSheet Download
Datasheet: H7N0312AB
File Size: 120052 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
H7N0311LM Maximum Ratings
| Item | Symbol | Value | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 45 | A |
| Drain peak current | ID (pulse) Note 1 | 180 | A |
| Body-drain diode reverse drain current | IDR | 45 | A |
| Channel to case thermal impedance | ch-c | 2.08 | °C/W |
| Channel dissipation | Pch Note 2 | 60 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
2. Value at Tc = 25°C
H7N0311LM Features
• Low on-resistance RDS (on) = 7.0 m typ.
• Low drive current
• Low drive current
H7N0311LS Maximum Ratings
| Item | Symbol | Value | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 45 | A |
| Drain peak current | ID (pulse) Note 1 | 180 | A |
| Body-drain diode reverse drain current | IDR | 45 | A |
| Channel to case thermal impedance | ch-c | 2.08 | °C/W |
| Channel dissipation | Pch Note 2 | 60 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
2. Value at Tc = 25°C
H7N0311LS Features
• Low on-resistance RDS (on) = 7.0 m typ.
• Low drive current
• Low drive current
H7N0312AB Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 85 | A |
| Drain peak current | ID(pulse) Note 1 | 340 | A |
| Body-drain diode reverse drain current | IDR | 85 | A |
| Channel dissipation | Pch Note 3 | 125 | W |
| Channel to Case Thermal Impedance | ch-c | 1.0 | °C/W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
H7N0312AB Features
Low on-resistance
RDS(on) = 2.6m Ω typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source
RDS(on) = 2.6m Ω typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source
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