Features: • Low on-resistance RDS (on) = 4.6 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A ...
H7N0307LM: Features: • Low on-resistance RDS (on) = 4.6 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain ...
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Item | Symbol | Value | Unit |
Drain to source voltage | VDSS | 30 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 60 | A |
Drain peak current | ID (pulse) Note 1 | 240 | A |
Body-drain diode reverse drain current | IDR | 60 | A |
Channel to case thermal impedance | ch-c | 1.39 | |
Channel to ambient thermal impedance | ch-a | 89 | |
Channel dissipation | Pch Note 2 | 90 | W |
Channel temperature | Tch | 150 | °C |
Storage temperature | Tstg | 55 to +150 | °C |