H7N0302LMTR, H7N0307, H7N0307AB Selling Leads, Datasheet
MFG:HITACHI Package Cooled:TO-263 D/C:01+
H7N0302LMTR, H7N0307, H7N0307AB Datasheet download
Part Number: H7N0302LMTR
MFG: HITACHI
Package Cooled: TO-263
D/C: 01+
H7N0302LMTR, H7N0307, H7N0307AB
- Table of contents:
Info of H7N0302LMTR
Info of H7N0307
Info of H7N0307AB
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About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0307AB
PDF/DataSheet Download
Datasheet: H7N0307AB
File Size: 123016 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0307AB
PDF/DataSheet Download
Datasheet: H7N0307AB
File Size: 123016 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
H7N0307AB Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 20 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 60 | A |
| Drain peak current | ID(pulse) Note 1 | 240 | A |
| Body-drain diode reverse drain current | IDR | 60 | A |
| Channel dissipation | Pch Note 3 | 90 | W |
| Channel to Case Thermal Impedance | ch-c | 1.39 | °C/W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
H7N0307AB Features
Low on-resistance
RDS(on) = 4.6 mΩ typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source
RDS(on) = 4.6 mΩ typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source
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