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H7N0308CF-E

Features: • Low on-resistance RDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A ...

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SeekIC No. : 004357860 Detail

H7N0308CF-E: Features: • Low on-resistance RDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain ...

H7N0308CF-E Data Sheet

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Part Number:
H7N0308CF-E
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
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Upload time: 2024/11/23

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Product Details

Description



Features:

• Low on-resistance RDS (on) = 3.8 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source


Specifications

Item Symbol Value Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 60 A
Drain peak current ID (pulse) Note 1 240 A
Body-drain diode reverse drain current IDR 60 A
Channel dissipation Pch Note 2 30 W
Channel to case thermal impedance ch-c 4.17 °C/W
Channel to ambient thermal impedance ch-a 62.5 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C


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