FQB9N15, FQB9N25, FQB9N25C Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:TO
FQB9N15, FQB9N25, FQB9N25C Datasheet download
Part Number: FQB9N15
MFG: FAIRC
Package Cooled: .
D/C: TO
MFG:FAIRC Package Cooled:. D/C:TO
FQB9N15, FQB9N25, FQB9N25C Datasheet download
MFG: FAIRC
Package Cooled: .
D/C: TO
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PDF/DataSheet Download
Datasheet: FQB9N15
File Size: 802890 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQB9N25
File Size: 747045 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQB9N25C
File Size: 890075 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol | Parameter |
FQB9N25C / FQI9N25C |
Units |
VDSS | Drain-Source Voltage |
250 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
8.8 |
A |
5.6 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
35.2 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
285 |
mJ |
IAR | Avalanche Current (Note 1) |
8.8 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
7.4 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
74 |
W | |
0.59 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |