FQB5N60, FQB5N60C, FQB5N80 Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:TO
FQB5N60, FQB5N60C, FQB5N80 Datasheet download
Part Number: FQB5N60
MFG: FAIRC
Package Cooled: .
D/C: TO
FQB5N60, FQB5N60C, FQB5N80
- Table of contents:
Info of FQB5N60
Info of FQB5N60C
Info of FQB5N80
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About FQB5N60
PDF/DataSheet Download
Datasheet: FQB5N60
File Size: 567291 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB5N60C
PDF/DataSheet Download
Datasheet: FQB5N60C
File Size: 636349 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB5N80
PDF/DataSheet Download
Datasheet: FQB5N80
File Size: 686877 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB5N60 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQB5N60 Maximum Ratings
| Symbol | Parameter |
FQB5N60 / FQI5N60 |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
5.0 |
A |
|
3.15 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
20 |
A |
| VGSS | Gate-Source Voltage |
±30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
300 |
mJ |
| IAR | Avalanche Current (Note 1) |
5.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
120 |
W | |
|
0.96 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB5N60 Features
• 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 9.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 9.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB5N60C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQB5N60C Maximum Ratings
| Symbol | Parameter |
FQB5N60C / FQI5N60C |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
4.5 |
A |
|
2.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
18 |
A |
| VGSS | Gate-Source Voltage |
±30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ |
| IAR | Avalanche Current (Note 1) |
4.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
10 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
100 |
W | |
|
0.8 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB5N60C Features
• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB5N80 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQB5N80 Maximum Ratings
| Symbol | Parameter |
FQB5N80 / FQI5N80 |
Units |
| VDSS | Drain-Source Voltage |
800 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
4.8 |
A |
|
3.04 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
19.2 |
A |
| VGSS | Gate-Source Voltage |
±30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
590 |
mJ |
| IAR | Avalanche Current (Note 1) |
4.8 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
14 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
140 |
W | |
|
1.12 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB5N80 Features
• 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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