FQB50N03, FQB50N06, FQB50N06L Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-263 D/C:06+
FQB50N03, FQB50N06, FQB50N06L Datasheet download
Part Number: FQB50N03
MFG: FAIRCHILD
Package Cooled: TO-263
D/C: 06+
FQB50N03, FQB50N06, FQB50N06L
- Table of contents:
Info of FQB50N03
Info of FQB50N06
Info of FQB50N06L
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About FQB10N20
PDF/DataSheet Download
Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB50N06
PDF/DataSheet Download
Datasheet: FQB50N06
File Size: 670257 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB50N06L
PDF/DataSheet Download
Datasheet: FQB50N06L
File Size: 670257 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB50N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQB50N06 Maximum Ratings
| Symbol | Parameter |
FQB50N06 / FQI50N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
50 |
A |
|
35.4 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
200 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
490 |
mJ |
| IAR | Avalanche Current (Note 1) |
50 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
120 |
W | |
|
0.8 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB50N06 Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
FQB50N06L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQB50N06L Maximum Ratings
| Symbol | Parameter |
FQB50N06L / FQI50N06L |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
52.4 |
A |
|
37.1 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
210 |
A |
| VGSS | Gate-Source Voltage |
±20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
990 |
mJ |
| IAR | Avalanche Current (Note 1) |
52.4 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12.1 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
121 |
W | |
|
0.81 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB50N06L Features
• 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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