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FQB4N90TM, FQB4P25, FQB4P40

Table of contents:
Info of FQB4N90TM
Info of FQB4P25
Info of FQB4P40

FQB4N90TM, FQB4P25, FQB4P40 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-263(D2PAK) D/C:06+

FQB4N90TM, FQB4P25, FQB4P40 Datasheet download

Five Points

Part Number: FQB4N90TM

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263(D2PAK)

D/C: 06+

Description: MOSFET N-CH 900V 4.2A D2PAK

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FQB4N90TM Parameters

Technical/Catalog Information	FQB4N90TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	4.2A
Rds On (Max) @ Id, Vgs	3.3 Ohm @ 2.1A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 25V
Power - Max	3.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB4N90TM FQB4N90TM

FQB4P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.

FQB4P25 Maximum Ratings

Symbol	Parameter	FQB4P25 / FQI4P25	Units
VDSS	Drain-Source Voltage	-250	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-4.0	A
ID		-2.53	A
IDM	Drain Current - Pulsed (Note 1)	-16	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	280	mJ
IAR	Avalanche Current (Note 1)	-4.0	A
EAR	Repetitive Avalanche Energy (Note 1)	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.6	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB4P25 Features

• -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQB4P40 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.

FQB4P40 Maximum Ratings

Symbol	Parameter	FQB4P40 / FQI4P40	Units
VDSS	Drain-Source Voltage	-400	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-3.5	A
ID		-2.2	A
IDM	Drain Current - Pulsed (Note 1)	-14	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	260	mJ
IAR	Avalanche Current (Note 1)	-3.5	A
EAR	Repetitive Avalanche Energy (Note 1)	8.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	85	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.68	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB4P40 Features

• -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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