MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FQB3N80, FQB3N90, FQB3N90TM Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 900V 3.6A D2PAK
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PDF/DataSheet Download
Datasheet: FQB3N80
File Size: 677849 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQB3N90
File Size: 713959 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter |
FQB3N80 / FQI3N80 |
Units |
| VDSS | Drain-Source Voltage |
800 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
3.0 |
A |
|
1.9 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
12 |
A |
| VGSS | Gate-Source Voltage |
±30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
320 |
mJ |
| IAR | Avalanche Current (Note 1) |
3.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
10.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
107 |
W | |
|
0.85 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter |
FQB3N90 / FQI3N90 |
Units |
| VDSS | Drain-Source Voltage |
900 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
3.6 |
A |
|
2.28 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
14.4 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
450 |
mJ |
| IAR | Avalanche Current (Note 1) |
3.6 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
13 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
130 |
W | |
|
1.04 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQB3N90TM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Rds On (Max) @ Id, Vgs | 4.25 Ohm @ 1.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
| Power - Max | 3.13W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQB3N90TM FQB3N90TM |
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