FQB2N80, FQB2N90, FQB2NA90 Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:06+
FQB2N80, FQB2N90, FQB2NA90 Datasheet download
Part Number: FQB2N80
MFG: FAIRC
Package Cooled: .
D/C: 06+
FQB2N80, FQB2N90, FQB2NA90
- Table of contents:
Info of FQB2N80
Info of FQB2N90
Info of FQB2NA90
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About FQB2N80
PDF/DataSheet Download
Datasheet: FQB2N80
File Size: 674973 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB2N90
PDF/DataSheet Download
Datasheet: FQB2N90
File Size: 777960 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB2NA90
PDF/DataSheet Download
Datasheet: FQB2NA90
File Size: 724184 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB2N80 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQB2N80 Maximum Ratings
| Symbol | Parameter |
FQB2N80 / FQI2N80 |
Units |
| VDSS | Drain-Source Voltage |
800 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.4 |
A |
|
1.52 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
9.6 |
A |
| VGSS | Gate-Source Voltage |
±30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
180 |
mJ |
| IAR | Avalanche Current (Note 1) |
2.4 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
8.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
85 |
W | |
|
0.68 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB2N80 Features
• 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB2NA90 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQB2NA90 Maximum Ratings
| Symbol | Parameter |
FQB2NA90 / FQI2NA90 |
Units |
| VDSS | Drain-Source Voltage |
900 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.8 |
A |
|
1.77 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
11.2 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
310 |
mJ |
| IAR | Avalanche Current (Note 1) |
2.8 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
10.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
107 |
W | |
|
0.85 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB2NA90 Features
• 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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