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FQB17P10, FQB17P10TM, FQB19N10

Table of contents:
Info of FQB17P10
Info of FQB17P10TM
Info of FQB19N10

FQB17P10, FQB17P10TM, FQB19N10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FQB17P10, FQB17P10TM, FQB19N10 Datasheet download

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Part Number: FQB17P10

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET P-CH 100V 16.5A D2PAK

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FQB17P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQB17P10 Maximum Ratings

Symbol	Parameter	FQB17P10 / FQI17P10	Units
VDSS	Drain-Source Voltage	-100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-16.5	A
ID		-11.7	A
IDM	Drain Current - Pulsed (Note 1)	-66	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	580	mJ
IAR	Avalanche Current (Note 1)	-16.5	A
EAR	Repetitive Avalanche Energy (Note 1)	10	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-6.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	100	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.67	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB17P10 Features

• -16.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQB17P10TM Parameters

Technical/Catalog Information	FQB17P10TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	16.5A
Rds On (Max) @ Id, Vgs	190 mOhm @ 8.25A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 25V
Power - Max	3.75W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB17P10TM FQB17P10TM

FQB19N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQB19N10 Maximum Ratings

Symbol	Parameter	FQB19N10 / FQI19N10	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	19	A
ID		13.5	A
IDM	Drain Current - Pulsed (Note 1)	76	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	220	mJ
IAR	Avalanche Current (Note 1)	19	A
EAR	Repetitive Avalanche Energy (Note 1)	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB19N10 Features

• 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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