FQB14N15, FQB14N30, FQB15P12 Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:06+
FQB14N15, FQB14N30, FQB15P12 Datasheet download
Part Number: FQB14N15
MFG: FAIRC
Package Cooled: .
D/C: 06+
FQB14N15, FQB14N30, FQB15P12
- Table of contents:
Info of FQB14N15
Info of FQB14N30
Info of FQB15P12
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About FQB14N15
PDF/DataSheet Download
Datasheet: FQB14N15
File Size: 807185 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB14N30
PDF/DataSheet Download
Datasheet: FQB14N30
File Size: 762451 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB15P12
PDF/DataSheet Download
Datasheet: FQB15P12
File Size: 667962 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB15P12 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQB15P12 Maximum Ratings
|
Symbol |
Parameter |
FQB15P12 / FQI15P12 |
Units | |
|
VDSS |
Drain-Source Voltage |
-120 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
-15 |
A |
|
- Continuous (TC = 100°C) |
-10.5 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
-60 |
A | |
|
VGSS |
Gate-Source Voltage |
±30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1157 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
-15 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
10 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.0 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.75 |
W | |
|
Power Dissipation (TC = 25°C) - Derate above 25°C |
100 |
W | ||
|
0.57 |
W/°C | |||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQB15P12 Features
• -15A, -120V, RDS(on) = 0.2 @VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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