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This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
FDT458P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a) Pulsed
3.4
A
10
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDT458P Features
` 3.4 A, 30 V. RDS(ON) = 130 mW @ VGS = 10 V RDS(ON) = 200 mW @ VGS = 4.5 V ` Fast switching speed ` Low gate charge (2.5 nC typical) ` High performance trench technology for extremely low RDS(ON) ` High power and current handling capability in a widely used surface mount package