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FDT459N, FDT461N, FDT5060

Table of contents:
Info of FDT459N
Info of FDT461N
Info of FDT5060

FDT459N, FDT461N, FDT5060 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:n/a D/C:02+

FDT459N, FDT461N, FDT5060 Datasheet download

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Part Number: FDT459N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: n/a

D/C: 02+

Description: MOSFET N-CH 100V 0.54A SOT-223

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FDT459N Parameters

Technical/Catalog Information	FDT459N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	35 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	365pF @ 15V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDT459N FDT459N

FDT459N General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

FDT459N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 1a) Pulsed	6.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	20	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	3.0	W
		1.3
		1.1
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDT459N Features

6.5 A, 30 V. R_DS(ON) = 0.035W @ V_GS = 10 V
R_DS(ON) = 0.055 W @ V_GS = 4.5 V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used surface mount package.

FDT459N Connection Diagram

FDT461N Parameters

Technical/Catalog Information	FDT461N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	540mA
Rds On (Max) @ Id, Vgs	2 Ohm @ 540mA, 10V
Input Capacitance (Ciss) @ Vds	74pF @ 25V
Power - Max	1.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDT461N FDT461N

FDT461N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	100	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (T_A = 25oC, V_GS = 10V, R_JA= 110°C/W)	0.54	A
	Continuous (T_A = 25oC, V_GS= 4.5V, R_JA= 110°C/W)	0.4	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	6.3	mJ
P_D	Power Dissipation Derate above 25 °C	1.13	W mW/°C
P_D	Power Dissipation Derate above 25 °C	9	W mW/°C
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDT461N Features

• r_DS(ON) = 1.45Ω (Typ.), V_GS = 4.5V, I_D = 0.4A
• Q_g(tot) = 2.36nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low QRR Body Diode

FDT461N Typical Application

• Servo Motor Load Control
• DC-DC converters

FDT461N Connection Diagram

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