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FDT457, FDT457N, FDT457N/457

FDT457, FDT457N, FDT457N/457 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:TO-223  D/C:05+

FDT457N Picture

FDT457, FDT457N, FDT457N/457 Datasheet download

Five Points

Part Number: FDT457N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-223

D/C: 05+

Description: MOSFET N-CH 30V 5A SOT-223

 

 
 
 
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About FDT457N

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Datasheet: FDT457N

File Size: 96770 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDT3612-NL

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  • FDT3N40TF

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  • FDT434P

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About FDT457N

PDF/DataSheet Download

Datasheet: FDT457N

File Size: 96770 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • D/C: 09+& Qty: 20000  Adddate: 2024-05-18
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  • FDT2019

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  • FDT3612-NL

  • Vendor: Fairchild Qty: 25000 Note: 0  Adddate: 2024-05-18
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    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
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  • FDT3N40TF

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  • FDT434-NL

  • Vendor: Fairchild Qty: 25000 Note: 0  Adddate: 2024-05-18
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  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)
  • FDT434P

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-05-18
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  • ALCON TECHNOLOGY CO., LTD.   China
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  • FDT434P

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About FDT3612

PDF/DataSheet Download

Datasheet: FDT3612

File Size: 110610 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDT457N Parameters

Technical/Catalog InformationFDT457N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs60 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 235pF @ 15V
Power - Max1.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs5.9nC @ 5V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDT457N
FDT457N
FDT457NDKR ND
FDT457NDKRND
FDT457NDKR

FDT457N General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

FDT457N Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                       Pulsed
5
A
16

PD
Power Dissipation for Single Operation (Note 1a)
                                                             (Note 1b)
                                                             (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
65 to +150
°C

FDT457N Features

5 A, 30 V. RDS(ON) = 0.06 W   @ VGS = 10 V
                   RDS(ON) = 0.090 W @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.

FDT457N Connection Diagram

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