FDT3612

MOSFET 100V NCh PowerTrench

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FDT3612 Picture
SeekIC No. : 00152122 Detail

FDT3612: MOSFET 100V NCh PowerTrench

floor Price/Ceiling Price

US $ .28~.48 / Piece | Get Latest Price
Part Number:
FDT3612
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.48
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  • $.32
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.7 A
Resistance Drain-Source RDS (on) : 88 m Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 3.7 A
Resistance Drain-Source RDS (on) : 88 m Ohms


Features:

• 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V
                        RDS(ON) = 130 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (14nC typ)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability in a widely used surface mount package



Application

• DC/DC converter
• Motor driving



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

100

V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                     Pulsed
3.7
A
20

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDT3612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These FDT3612 MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.


Parameters:

Technical/Catalog InformationFDT3612
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C3.7A
Rds On (Max) @ Id, Vgs120 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds 632pF @ 50V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDT3612
FDT3612



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