MOSFET SOT-223 P-CH -20V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 0.05 Ohms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
-20 |
V |
VGSS |
Gate-Source Voltage |
±8 |
V |
ID |
Drain Current Continuous (Note 1a) Pulsed |
-60 |
A |
-30 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
3.0 |
W |
1.3 | |||
1.1 | |||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
The FDT434P is a P-channel 2.5V specified powertrench MOSFET.This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Features of the FDT434P are:(1)5.5 A,20 V. RDS(ON) = 0.050 @ VGS =4.5 V,RDS(ON) = 0.070 @ VGS = 2.5 V; (2)low gate charge (13nC typical); (3)high performance trench technology for extremely low RDS(ON); (4)high power and current handling capability in a widely used surface mount package.This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
The absolute maximum ratings of the FDT434P can be summarized as:(1)drain-source voltage:-20 V;(2)storage temperature range:-55 to 150;(3)drain current:-30A;(4)operating junction temperature:-55 to 150;(5)power dissipation:3W;(6)gate-source voltage:±8V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
Technical/Catalog Information | FDT434P |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 6A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1187pF @ 10V |
Power - Max | 1.1W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDT434P FDT434P FDT434PCT ND FDT434PCTND FDT434PCT |