FDT458P

MOSFET 30V P-Ch PowerTrench

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SeekIC No. : 00149547 Detail

FDT458P: MOSFET 30V P-Ch PowerTrench

floor Price/Ceiling Price

US $ .25~.37 / Piece | Get Latest Price
Part Number:
FDT458P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 130 m Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 130 m Ohms


Features:

`  3.4 A, 30 V. RDS(ON) = 130 mW @ VGS = 10 V
                           RDS(ON) = 200 mW @ VGS = 4.5 V
`  Fast switching speed
`  Low gate charge (2.5 nC typical)
`  High performance trench technology for extremely low RDS(ON)
`  High power and current handling capability in a widely used surface mount package



Application

·  Battery chargers
·  Motor drives



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

-30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                       Pulsed
3.4
A
10

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDT458P P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs FDT458P feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.


Parameters:

Technical/Catalog InformationFDT458P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C3.4A
Rds On (Max) @ Id, Vgs130 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds 205pF @ 15V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.5nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDT458P
FDT458P



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