FDT459N

MOSFET SOT-223 N-CH 30V

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FDT459N: MOSFET SOT-223 N-CH 30V

floor Price/Ceiling Price

US $ .27~.47 / Piece | Get Latest Price
Part Number:
FDT459N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Unit Price
  • $.47
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  • Processing time
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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

6.5 A, 30 V. RDS(ON) = 0.035W  @ VGS = 10 V
                      RDS(ON) = 0.055 W @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30

V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                       Pulsed
6.5
A
20

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDT459N N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products FDT459N are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.


Parameters:

Technical/Catalog InformationFDT459N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.5A
Rds On (Max) @ Id, Vgs35 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds 365pF @ 15V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDT459N
FDT459N



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