FDT459N

MOSFET SOT-223 N-CH 30V

product image

FDT459N Picture
SeekIC No. : 00147718 Detail

FDT459N: MOSFET SOT-223 N-CH 30V

floor Price/Ceiling Price

US $ .27~.47 / Piece | Get Latest Price
Part Number:
FDT459N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.47
  • $.39
  • $.33
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

6.5 A, 30 V. RDS(ON) = 0.035W  @ VGS = 10 V
                      RDS(ON) = 0.055 W @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30

V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                       Pulsed
6.5
A
20

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDT459N N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products FDT459N are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.


Parameters:

Technical/Catalog InformationFDT459N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.5A
Rds On (Max) @ Id, Vgs35 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds 365pF @ 15V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDT459N
FDT459N



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Programmers, Development Systems
Sensors, Transducers
Resistors
Undefined Category
Batteries, Chargers, Holders
Memory Cards, Modules
View more