FDT457N

MOSFET SOT-223 N-CH 30V

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SeekIC No. : 00145905 Detail

FDT457N: MOSFET SOT-223 N-CH 30V

floor Price/Ceiling Price

US $ .21~.32 / Piece | Get Latest Price
Part Number:
FDT457N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 100~250
  • Unit Price
  • $.32
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Continuous Drain Current : 5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.06 Ohms


Features:

5 A, 30 V. RDS(ON) = 0.06 W   @ VGS = 10 V
                   RDS(ON) = 0.090 W @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a)
                       Pulsed
5
A
16

PD
Power Dissipation for Single Operation (Note 1a)
                                                             (Note 1b)
                                                             (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
65 to +150
°C



Description

These FDT457N N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products FDT457N are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.


Parameters:

Technical/Catalog InformationFDT457N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs60 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 235pF @ 15V
Power - Max1.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs5.9nC @ 5V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDT457N
FDT457N
FDT457NDKR ND
FDT457NDKRND
FDT457NDKR



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