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This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDT434P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current Continuous (Note 1a) Pulsed
-60
A
-30
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
3.0
W
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDT434P Features
• 5.5 A, 20 V. RDS(ON) = 0.050 Ω @ VGS = 4.5 V RDS(ON) = 0.070 Ω @ VGS = 2.5 V. • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability in a widely used surface mount package.