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BSO604NS2, BSO613SPV, BSO615C

Table of contents:
Info of BSO604NS2
Info of BSO613SPV
Info of BSO615C

BSO604NS2, BSO613SPV, BSO615C Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SO,8P D/C:06+

BSO604NS2, BSO613SPV, BSO615C Datasheet download

Five Points

Part Number: BSO604NS2

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: SO,8P

D/C: 06+

Description: MOSFET P-CH 60V 3.44A DSO-8

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BSO604NS2 Parameters

Technical/Catalog Information	BSO604NS2
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	44 mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) @ Vds	870pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	DSO-8
FET Feature	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO604NS2 BSO604NS2

BSO604NS2 Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A=25°Cone channel active T_A=70°Cone channel active	I_D	5 4	A
Pulsed drain current T_A=25°C	I_Dpulse	20	A
Avalanche energy, single pulse I_D=12.7 A , V_DD=25V, R_GS=25	E_AS	90	mJ
Reverse diode dv/dt I_S=12.7A, V_DS=24V, di/dt=200A/s, T_jmax=150°C	dv/dt	6	kV/s
Gate source voltage	V_GS	±25	V
Power dissipation T_A=25°C	P_tot	2.5	W
Operating and storage temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56

BSO604NS2 Features

• Dual N-Channel
• Enhancement mode
• Logic Level
•150 °C operating temperature
• Avalanche rated
• dv/dt rated

BSO613SPV Parameters

Technical/Catalog Information	BSO613SPV
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3.44A
Rds On (Max) @ Id, Vgs	130 mOhm @ 3.44A, 10V
Input Capacitance (Ciss) @ Vds	875pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO613SPV BSO613SPV

BSO613SPV Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A = 25 °C	I_D	-3.44	A
Pulsed drain current, one channel active T_A= 25 °C	I_Dpuls	-13.8	A
Avalanche energy, single pulse I_D = 3.1 A , V_DD = 25 V, R_GS= 25 I_D = -2 A , V_DD = -25 V, R_GS = 25	E_AS	150	mJ
Avalanche current,periodic limited by T_jmax	E_AR	0.25	A
Avalanche energy, periodic limited by T _jmax	E _AR	0.18	mJ
Reverse diode dv/dt I_S = 3.1 A, V_DS = 48 V, di/dt = 200 A/s, I_S = -2 A, V_DS = -48 T _jmax = 150 °C	dv/dt	6	kV/s
Gate source voltage	V_GS	±20	V
Power dissipation, one channel active T_A= 25 °C	P_tot	2.5	W
Operating temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56	°C

BSO613SPV Features

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated

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