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BSO094N3S, BSO104N03S, BSO104N3S

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Info of BSO094N3S
Info of BSO104N03S
Info of BSO104N3S

BSO094N3S, BSO104N03S, BSO104N3S Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:08+

BSO094N3S, BSO104N03S, BSO104N3S Picture

BSO094N3S, BSO104N03S, BSO104N3S Datasheet download

Five Points

Part Number: BSO094N3S

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: SOP-8

D/C: 08+

Description: MOSFET N-CH 30V 10A DSO-8

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BSO104N03S Parameters

Technical/Catalog Information	BSO104N03S
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	9.7 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	2130pF @ 15V
Power - Max	1.56W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	16nC @ 5V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSO104N03S BSO104N03S

BSO104N03S Maximum Ratings

Parameter	Symbol	Conditions	Values		Unit
Parameter	Symbol	Conditions	10 secs	steady state	Unit
Continuous drain current	I_D	T_A=25 °C¹⁾	13	10	A
Continuous drain current	I_D	T_A=70 °C¹⁾	10	8	A
Pulsed drain current, one channel active	I_Dpulse	T_A=25 °C²⁾	52		A
Avalanche energy, single pulse	E_AS	I D=-9.1 A, RGS=25	73		mJ
Reverse diode dv/dt	dv/dt	I_D=-9.1 A, V_DS=20 V, di /dt =-200 A/s, T _j,max=150 °C	6		kV/s
Gate source voltage	V_GS		±25		V
Power dissipation	P_tot	T_A=25 °C¹)	2.5	1.56	W
Operating temperature	T _j , T _stg		-55 ... +150		°C
IEC climatic category, DIN IEC 68-1			55/150/56		°C

BSO104N03S Features

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC¹for target applications
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)• Avalanche rated
• dv /dt rated

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